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Director, Pathfinding Solutions – Integrated Materials

amat · Albany

New
Senior 176,000 - 242,000 USD/year 🇬🇧 English
deposition etch epitaxy thermal processing FEOL MOL BEOL device physics Complementary FET (CFET) 3D DRAM 4F2 DRAM NAND

Job description

About the role

Applied Materials is seeking a Director of Pathfinding Solutions to lead the development of next‑generation semiconductor process solutions for advanced logic and memory architectures. The role sits at the intersection of process engineering, device physics and materials science, driving integrated pathfinding projects from concept through customer demonstration.

Key responsibilities

  • Develop and demonstrate integrated pathfinding process flows for N+1, N+2 and beyond technology nodes across logic (GAA, CFET) and memory (DRAM, NAND) architectures.
  • Lead hands‑on development across deposition, etch, implant, epitaxy, CMP and thermal processing, linking individual steps into cohesive modules.
  • Identify and de‑risk critical integration challenges through systematic experimentation and DTCO analysis.
  • Collaborate with multiple Applied Materials Business Units to influence product roadmaps and assemble end‑to‑end process flows.
  • Engage senior technologists at key customers (e.g., Samsung, Intel, TSMC) to present data, align priorities and support co‑development programs.

Required profile

  • Ph.D. in Electrical Engineering, Materials Science, Chemical Engineering, Physics or a related discipline.
  • 10+ years of semiconductor process development or device engineering experience with deep expertise in FEOL, MOL or BEOL technologies.
  • Proven track record of delivering integrated process solutions for advanced logic or memory nodes.
  • Strong publication record at top conferences (IEDM, VLSI, ISSCC) and/or a significant patent portfolio.

Required skills

  • Process development techniques: deposition, etch, ion implantation, epitaxy, CMP, thermal processing.
  • Advanced device architectures: Gate‑All‑Around (GAA), Complementary FET (CFET), 3D DRAM, 4F2 DRAM, NAND.
  • Design‑Technology Co‑Optimization (DTCO) and device physics analysis.
  • Advanced metallization knowledge (Mo, Cu, W) and selective patterning approaches.

What we offer

  • Base salary range $176,000 – $242,000 per year, plus bonus and stock award opportunities.
  • Supportive work culture with health, wellbeing and professional development programs.
  • Location in Albany, NY with full‑time onsite role.

Questions fréquentes

Le salaire proposé pour ce poste est de 176-242k USD par an. Le détail figure dans l'annonce.
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Source : ats:workday

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amat

Albany